Abstract: PVT-tolerant and supply noise tracking word-line under-drive circuit, PMOS pass device, and dynamic voltage collapse enable read and write stable Diffusion-Notch-Free (DNF) 6T SRAM cells.
Abstract: In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The ...
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